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PJX20N60D

Potens semiconductor
Part Number PJX20N60D
Manufacturer Potens semiconductor
Description N-Channel MOSFETS
Published Aug 23, 2018
Detailed Description 600V N-Channel MOSFETS PJX20N60D General Description These N-Channel enhancement mode power field effect transistors a...
Datasheet PDF File PJX20N60D PDF File

PJX20N60D
PJX20N60D

Overview
600V N-Channel MOSFETS PJX20N60D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply TO247 Pin Configuration D S D G G S BVDSS 600V RDSON 180m ID 20A Features  20A,600V, RDS(ON) =180mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  High efficient switched mode power supplies...


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