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PDD16N25 Dataheets PDF



Part Number PDD16N25
Manufacturers Potens semiconductor
Logo Potens semiconductor
Description N-Channel MOSFETs
Datasheet PDD16N25 DatasheetPDD16N25 Datasheet (PDF)

250V N-Channel MOSFETs PDD16N25 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 250V RDSON 200m Features  Improved dv/dt capability  Fast swi.

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250V N-Channel MOSFETs PDD16N25 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS 250V RDSON 200m Features  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available ID 16A TO252 Pin Configuration D S G G D S Applications  High efficient switched mode power supplies  TV Power  Adapter/charger  Networking  PV Inverter / UPS Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Puls.


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