Document
250V N-Channel MOSFETs
PDD16N25
General Description
These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply
BVDSS 250V
RDSON 200m
Features Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
ID 16A
TO252 Pin Configuration
D
S G
G
D S
Applications High efficient switched mode power supplies TV Power Adapter/charger Networking PV Inverter / UPS
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM EAS IAS
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Puls.