40V N-Channel MOSFETs
PDD4912-1
General Description
These N-Channel enhancement mode power field effect transistors ar...
40V N-Channel MOSFETs
PDD4912-1
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
TO252 Pin Configuration
D
S G
G
D S
BVDSS 40V
RDSON 30m
ID 23A
Features
40V,23A, RDS(ON) =30mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed 100% PB free and Green Device Available
Applications
Networking Load Switch LED applications
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Power Dissipati...