PDD2314

20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO252 Pin Configuration D D G S G S PDD2314 BVDSS 20V RDSON 25m ID 20A Features  20V, 20A, RDS(ON) =25mΩ@VGS = 4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.8V Gate Drive Applications Applications  Notebook  Load Switch  Hend-Held Instruments  Networking Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Puls...