60V N-Channel MOSFETs
PDEU69A8Y
General Description
These N-Channel enhancement mode power field effect transistors ar...
60V N-Channel MOSFETs
PDEU69A8Y
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
SOT523 Pin Configuration
D
BVDSS 60V
RDSON 3
ID 300mA
Features
60V,300mA, RDS(ON) =3Ω@VGS = 10V Improved dv/dt capability Fast switching Green Device Available
D
S G
G
S
Applications
Notebook Load Switch Battery Protection Hand-held Instruments
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Continuous (TA=70℃) Drain Current – Pulsed1 Power Dissipation (TC=25℃) P...