PDEU2320Y

20V N-Channel MOSFETs PDEU2320Y General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT523 Pin Configuration D D S G G S BVDSS 20V RDSON 300m ID 800mA Features  20V,800mA, RDS(ON) =300mΩ@VGS = 4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.5V Gate Drive Applications Applications  Notebook  Load Switch  Battery Protection  Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain C...