Preliminary datasheet
20V P-Channel MOSFETs
PDEN2319S
General Description
These P-Channel enhancement mode power fiel...
Preliminary datasheet
20V P-Channel MOSFETs
PDEN2319S
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
SOT23-S Pin Configuration
D
D
S G
G
S
BVDSS -20V
RDSON 600m
ID -1A
Features
-20V,-1A, RDS(ON) =600mΩ@VGS = -4.5V Improved dv/dt capability Fast switching Green Device Available Suit for -1.5V Gate Drive Applications
Applications
Notebook Load Switch Battery Protection Hand-held Instruments
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TA=25℃) Drain Current – Contin...