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MG9410-R

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SILICON EPITAXIAL PLANAR PNP TRANSISTOR

SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9410, MG9410-R • TO-3P Plastic Package • Complimentary NPN – MG6330 • Designed...


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MG9410-R

File Download Download MG9410-R Datasheet


Description
SILICON EPITAXIAL PLANAR PNP TRANSISTOR MG9410, MG9410-R TO-3P Plastic Package Complimentary NPN – MG6330 Designed specifically for audio power amplifier applications High Current audio bipolar with wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current Total Power Dissipation at TA = 25°C Maximum Junction Temperature Storage Temperature Range MG9410 MG9410-R -230V -260V -230V -260V -5V -15A -4A 200W 150°C -55 to +150°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 0.63 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However...




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