30V P-Channel MOSFETs
PDEC3907Z
General Description These P-Channel enhancement mode power field effect transistors ar...
30V P-Channel MOSFETs
PDEC3907Z
General Description These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
PPAK3x3 Pin Configuration
DDDD S S SG
G
D
BVDSS -30V
RDSON 20m
ID -30A
Features
-30V,-30A, RDS(ON) =20mΩ@VGS = -10V
Fast switching
Green Device Available
Suit for -4.5V Gate Drive Applications
ESD Protection Embedded
Applications MB / VGA / Vcore POL Applications Load Switch LED Application
S
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol VDS VGS
ID
IDM
PD
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Dr...