Pin Diode Switch Element
MEST2G-080-25
Pin Diode Switch Element
Features
High Power Handling: 80 W @ 2 GHz or Less Low Insertion Loss:
<0.3...
Description
MEST2G-080-25
Pin Diode Switch Element
Features
High Power Handling: 80 W @ 2 GHz or Less Low Insertion Loss:
<0.35 dB @ 2 GHz <0.60 dB @ 6 GHz Medium Isolation: >22 dB @ 2 GHz >14 dB @ 6 GHz RoHS* Compliant
Description
The MEST2G-080-25-CM27 is a thermal to ground series diode switch element in a Alumina Nitride package. This part is designed for reliable high power switch application up to 80 watts. Usable up to 10 GHz.
Electrical Specifications: TC = +25°C (unless otherwise specified)
Parameter
Test Conditions
Units Min.
Breakdown Voltage (VBR)
IR = 10 mA, single diode
V 500
Leakage Current (IR)
IF = 100 V, single diode
nA —
Forward Voltage (VF)
IF = 100 mA, single diode
mV —
Series Resistance (RS)
IF = 100 mA, single diode
Ω—
Junction Capacitance (CJ)
VR = 50 V, 1 MHz, single diode
pF —
Lifetime (t)
IF = 10 mA, IR = 6 mA, @ 50%
ns —
I-Region (w) Return Loss (RL) Insertion Loss (IL)
Isolation (ISO)
I-Layer, single diode IF = 100 ...
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