MSAT-N25
NIP Diode Attenuator Shunt Element
(2012) Plastic Molded DFN
Description
A broadband, High Linearity medium power shunt NIP Attenuator element 1.9 X 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is also suited for other applications in 0.1 ~ 10 GHz range.
Features
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