MNP0014

MNP0014 Silicon NIP Diode Features  Rugged Construction  Fully Passivated  Low Leakage  Available in Both Chip and Package Styles  Screening per MIL-PRF-19500 and MIL-PRF- 38534 Available Description The MNP0014 Series are silicon NIP diodes that features a fully passivated mesa construction for low leakage and reliability. Rev. V2 Electrical Specifications: TC = +25°C Parameter Test Conditions Voltage Breakdown Junction Capacitance DIE Package (C22p) Total Capacitance Package Style: ET47p T54p T55p T89p Series Resistance IR = 10 µA VR = 50 V, 1 MHz VR = 50 V, 1 MHz IF = 100 mA, 500 MHz Lifetime IF = 10 mA, IR = 6 mA, 50% I Layer — Units V pF Min. 500 — Typ. — 0.12 Max. — 0.18 pF — 0.52 0.58 0.32 0.38 0.25 0.31 0.37 0.43 Ω — 1.3 1.6 ns — 750 — µm — 80 — Absolute Maximum Ratings1,2 Parameter Reverse Voltage Thermal Resistance Operating & Storage Temperature Absolute Maximum 500 V +10°C/W -65°C to +150°C 1. Exceeding any...