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MNP0008

Part Number	MNP0008
Manufacturer	MA-COM
Description	Silicon NIP Diode
Published	Aug 7, 2018
Detailed Description	MNP0008 Silicon NIP Diode Features  Rugged Construction  Fully Passivated  Low Leakage  Available in Both Chip and P...
Datasheet	MNP0008 PDF File

Overview

MNP0008 Silicon NIP Diode Features  Rugged Construction  Fully Passivated  Low Leakage  Available in Both Chip and Package Styles  Screening per MIL-PRF-19500 and MIL-PRF- 38534 Available Description The MNP0008 Series are silicon NIP diodes that features a fully passivated mesa construction for low leakage and reliability.
Rev.
V3 Electrical Specifications: TC = +25°C Parameter Test Conditions Voltage Breakdown Junction Capacitance DIE Package (C12p) Total Capacitance Package Style: ET47p T54p T55p T89p Series Resistance IR = 10 µA VR = 10 V, 1 MHz VR = 10 V, 1 MHz IF = 10 mA, 500 MHz Lifetime IF = 10 mA, IR = 6 mA, 50% I Layer — Units V pF Min.
100 — Typ.
— 0.
08 Max.
— 0...

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