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BCP52-16 Dataheets PDF



Part Number BCP52-16
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description PNP Silicon AF Transistors
Datasheet BCP52-16 DatasheetBCP52-16 Datasheet (PDF)

PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 ... BCP56 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCP51...-BCP53... Type BCP51 BCP51-16 BCP52-16 BCP53-10 BCP53-16 Marking Pin Configuration * 1=B 2=C 3=E 4=C - - * 1=B 2=C 3=E 4=C - - * 1=B 2=C 3=E 4=C - - * 1=B 2=C 3=E 4=C - - * 1=B 2=C 3=E 4=C - - * Marking is the same as type-name Pac.

  BCP52-16   BCP52-16


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PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 ... BCP56 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCP51...-BCP53... Type BCP51 BCP51-16 BCP52-16 BCP53-10 BCP53-16 Marking Pin Configuration * 1=B 2=C 3=E 4=C - - * 1=B 2=C 3=E 4=C - - * 1=B 2=C 3=E 4=C - - * 1=B 2=C 3=E 4=C - - * 1=B 2=C 3=E 4=C - - * Marking is the same as type-name Package SOT223 SOT223 SOT223 SOT223 SOT223 1 2011-10-13 BCP51...-BCP53... Maximum Ratings Parameter Collector-emitter voltage BCP51 BCP52 BCP53 Symbol VCEO Value 45 60 80 Collector-base voltage BCP51 BCP52 BCP53 VCBO 45 60 100 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 120°C VEBO 5 IC 1 ICM 1.5 IB 100 IBM 200 Ptot 2 Junction temperature Tj 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 15 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V A mA W °C Unit K/W 2 2011-10-13 BCP51...-BCP53... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCP51 IC = 10 mA, IB = 0 , BCP52 IC = 10 mA, IB = 0 , BCP53 V(BR)CEO 45 - 60 - 80 - V - Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCP51 IC = 100 µA, IE = 0 , BCP52 IC = 100 µA, IE = 0 , BCP53 V(BR)CBO 45 - - 60 - - 100 - - Emitter-base breakdown voltage V(BR)EBO 5 - - IE = 10 µA, IC = 0 Collector-base cutoff current ICBO µA VCB = 30 V, IE = 0 - - 0.1 VCB = 30 V, IE = 0 , TA = 150 °C - - 20 DC current gain1) hFE - IC = 5 mA, VCE = 2 V 25 - - IC = 150 mA, VCE = 2 V, BCP51 40 - 250 IC = 150 mA, VCE = 2 V, BCP53-10 63 100 160 IC = 150 mA, VCE = 2 V, BCP51-16...BCP53-16 100 160 250 IC = 500 mA, VCE = 2 V 25 - - Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter voltage1) IC = 500 mA, VCE = 2 V VCEsat - VBE(ON) - - 0.5 V - 1 AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz fT - 125 - MHz 1Pulse test: t < 300µs; D < 2% 3 2011-10-13 BCP51...-BCP53... DC current gain hFE = ƒ(IC) VCE = 2 V 10 3 BCP 51...53 5 h FE 100 C 102 25 C -50 C 5 10 1 5 EHP00261 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 10 4 BCP 51...53 Ι C mA 10 3 5 10 2 5 100 C 25 C -50 C EHP00264 10 1 5 10 0 10 0 10 1 10 2 103 mA 104 ΙC Base-emitter saturation voltage IC = ƒ(VBEsat), hFE = 10 10 0 0 0.2 0.4 0.6 V 0.8 V CEsat Collector cutoff current ICBO = ƒ(TA) VCBO = 30 V 10 4 BCP 51...53 Ι C mA 10 3 10 2 100 C 25 C -50 C 10 1 EHP00263 10 4 BCP 51...53 nA Ι CBO 10 3 10 2 10 1 10 0 EHP00262 max typ 10 0 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat 10 -1 0 4 50 100 C 150 TA 2011-10-13 BCP51...-BCP53... Transition frequency fT = ƒ(IC) VCE = 10 V 10 3 BCP 51...53 MHz fT 5 EHP00260 Total power dissipation Ptot = ƒ(TS) 2.4 W Ptot 1.6 10 2 1.2 5 0.8 0.4 10 1 10 0 10 1 102 mA 103 ΙC Permissible Pulse Load RthJS = ƒ(tp) 0 0 15 30 45 60 75 90 105 120 °C 150 TS Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 2 10 3 - Ptotmax/PtotDC RthJS 10 1 D = 0,5 0,2 0,1 10 0 0,05 0,02 0,01 0,005 0 10 -1 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 TP D=0 10 2 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-10-13 Package Outline Package SOT223 BCP51...-BCP53... A 6.5 ±0.2 3±0.1 4 1.6±0.1 0.1 MAX. B 7±0.3 15˚ MAX. 3.5 ±0.2 Foot Print 1 2 3 0.7 ±0.1 0.25 M A 2.3 4.6 3.5 0.5 MIN. 0.28 ±0.04 0...10˚ 0.25 M B 1.4 4.8 1.4 Marking Layout (Example) 1.2 1.1 Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 8 Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code 0.3 MAX. 7.55 12 Pin 1 6.8 1.75 6 2011-10-13 BCP51...-BCP53... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Offi.


BCP52-16 BCP52-16 AT49LV002T


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