Document
PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 ... BCP56 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101
BCP51...-BCP53...
Type BCP51 BCP51-16 BCP52-16 BCP53-10 BCP53-16
Marking
Pin Configuration
*
1=B 2=C 3=E 4=C -
-
*
1=B 2=C 3=E 4=C -
-
*
1=B 2=C 3=E 4=C -
-
*
1=B 2=C 3=E 4=C -
-
*
1=B 2=C 3=E 4=C -
-
* Marking is the same as type-name
Package SOT223 SOT223 SOT223 SOT223 SOT223
1
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BCP51...-BCP53...
Maximum Ratings Parameter Collector-emitter voltage BCP51 BCP52 BCP53
Symbol VCEO
Value
45 60 80
Collector-base voltage BCP51 BCP52 BCP53
VCBO 45 60 100
Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 120°C
VEBO
5
IC
1
ICM
1.5
IB
100
IBM
200
Ptot
2
Junction temperature
Tj
150
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
≤ 15
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit V
A mA W °C Unit K/W
2
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BCP51...-BCP53...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCP51 IC = 10 mA, IB = 0 , BCP52 IC = 10 mA, IB = 0 , BCP53
V(BR)CEO
45
-
60
-
80
-
V -
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCP51 IC = 100 µA, IE = 0 , BCP52 IC = 100 µA, IE = 0 , BCP53
V(BR)CBO
45
-
-
60
-
-
100
-
-
Emitter-base breakdown voltage
V(BR)EBO 5
-
-
IE = 10 µA, IC = 0
Collector-base cutoff current
ICBO
µA
VCB = 30 V, IE = 0
-
-
0.1
VCB = 30 V, IE = 0 , TA = 150 °C
-
-
20
DC current gain1)
hFE
-
IC = 5 mA, VCE = 2 V
25
-
-
IC = 150 mA, VCE = 2 V, BCP51
40
- 250
IC = 150 mA, VCE = 2 V, BCP53-10
63 100 160
IC = 150 mA, VCE = 2 V, BCP51-16...BCP53-16
100 160 250
IC = 500 mA, VCE = 2 V
25
-
-
Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter voltage1) IC = 500 mA, VCE = 2 V
VCEsat
-
VBE(ON)
-
-
0.5 V
-
1
AC Characteristics
Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz
fT
- 125 - MHz
1Pulse test: t < 300µs; D < 2%
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BCP51...-BCP53...
DC current gain hFE = ƒ(IC) VCE = 2 V
10 3 BCP 51...53 5
h FE 100 C
102 25 C -50 C
5
10 1 5
EHP00261
Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10
10 4 BCP 51...53
Ι C mA 10 3 5
10 2 5
100 C 25 C -50 C
EHP00264
10 1 5
10 0
10 0
10 1
10 2
103 mA 104
ΙC
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
10 0 0
0.2
0.4
0.6 V 0.8
V CEsat
Collector cutoff current ICBO = ƒ(TA) VCBO = 30 V
10 4 BCP 51...53 Ι C mA
10 3
10 2
100 C 25 C -50 C
10 1
EHP00263
10 4 BCP 51...53
nA Ι CBO
10 3
10 2 10 1
10 0
EHP00262
max
typ
10 0 0
0.2 0.4 0.6 0.8 V 1.2 V BEsat
10 -1 0
4
50
100 C 150
TA
2011-10-13
BCP51...-BCP53...
Transition frequency fT = ƒ(IC) VCE = 10 V
10 3 BCP 51...53
MHz
fT
5
EHP00260
Total power dissipation Ptot = ƒ(TS)
2.4 W
Ptot
1.6
10 2
1.2
5
0.8
0.4
10 1
10 0
10 1
102 mA 103
ΙC
Permissible Pulse Load RthJS = ƒ(tp)
0 0 15 30 45 60 75 90 105 120 °C 150
TS
Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp)
10 2
10 3
-
Ptotmax/PtotDC
RthJS
10 1
D = 0,5
0,2
0,1
10 0
0,05
0,02
0,01
0,005
0
10
-1
10
-6
10 -5
10 -4
10 -3
10 -2
s
10 0
TP
D=0
10 2
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10
0
10
-6
10 -5
10 -4
10 -3
10 -2
s
10 0
tp
5
2011-10-13
Package Outline
Package SOT223
BCP51...-BCP53...
A
6.5 ±0.2
3±0.1
4
1.6±0.1 0.1 MAX.
B
7±0.3 15˚ MAX.
3.5 ±0.2
Foot Print
1
2
3
0.7 ±0.1 0.25 M A
2.3 4.6
3.5
0.5 MIN.
0.28 ±0.04 0...10˚
0.25 M B
1.4
4.8
1.4
Marking Layout (Example)
1.2 1.1
Pin 1
Packing
Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel
8
Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code
0.3 MAX.
7.55 12
Pin 1
6.8
1.75
6
2011-10-13
BCP51...-BCP53...
Edition 2009-11-16
Published by Infineon Technologies AG 81726 Munich, Germany
2009 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
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