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MM54C200 Dataheets PDF



Part Number MM54C200
Manufacturers National Semiconductor
Logo National Semiconductor
Description Random Access Read/Write Memory
Datasheet MM54C200 DatasheetMM54C200 Datasheet (PDF)

Obsolete MM54C200 MM74C200 256-Bit TRI-STATE Random Access Read Write Memory February 1988 MM54C200 MM74C200 256-Bit TRI-STATE Random Access Read Write Memory General Description The MM54C200 MM74C200 is a 256-bit random access read write memory Inputs consist of eight address lines and three chip enables The eight binary address inputs are decoded internally to select each of the 256 locations The internal address register latches and address information are on the positive to negative edge.

  MM54C200   MM54C200


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Obsolete MM54C200 MM74C200 256-Bit TRI-STATE Random Access Read Write Memory February 1988 MM54C200 MM74C200 256-Bit TRI-STATE Random Access Read Write Memory General Description The MM54C200 MM74C200 is a 256-bit random access read write memory Inputs consist of eight address lines and three chip enables The eight binary address inputs are decoded internally to select each of the 256 locations The internal address register latches and address information are on the positive to negative edge of CE3 The TRISTATE data output line working in conjunction with CE1 or CE2 inputs provides for easy memory expansion Address Operation Address inputs must be stable tSA prior to the positive to negative transition of CE3 It is therefore unnecessary to hold address information stable for more than tHA after the memory is enabled (positive to negative transition) Note The timing is different from the DM74200 in that a positive to negative transition of the CE3 must occur for the memory to be sel.


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