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MQ081K0VP

Innogration
Part Number MQ081K0VP
Manufacturer Innogration
Description High Power RF LDMOS FET
Published Aug 5, 2018
Detailed Description MQ081K0VP LDMOS TRANSISTOR 1000W, 50V High Power RF LDMOS FETs Description The MQ081K00VP is a 1000-watt capable, high ...
Datasheet PDF File MQ081K0VP PDF File

MQ081K0VP
MQ081K0VP

Overview
MQ081K0VP LDMOS TRANSISTOR 1000W, 50V High Power RF LDMOS FETs Description The MQ081K00VP is a 1000-watt capable, high performance, internally matched LDMOS FET, designed for narrow band pulsed applications with frequencies 400MHz to 800MHz.
 Typical Performance (on innogration demo with device soldered): Frequency:440MHz,: Vds = 50 Volts, Idq = 100 mA, TA = 25 C Pulse condition Gp (dB) POUT(W) D@POUT (%) pulse width 100us duty cycle 10% 19.
3 1060 68.
5 Document Number: MQ081K0VP Preliminary Datasheet V1.
0 MQ081K0VP Features  High Efficiency and Linear Gain Operations  Integrated ESD Protection  Internally Matched for Ease of Use  Large Positive and Negative Gate/Source Vo...


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