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MR2002C

Innogration
Part Number MR2002C
Manufacturer Innogration
Description High Power RF LDMOS FET
Published Aug 5, 2018
Detailed Description MR2002C LDMOS TRANSISTOR Document Number: MR2002C Preliminary Datasheet V1.1 20W, 28V High Power RF LDMOS FETs Descri...
Datasheet PDF File MR2002C PDF File

MR2002C
MR2002C

Overview
MR2002C LDMOS TRANSISTOR Document Number: MR2002C Preliminary Datasheet V1.
1 20W, 28V High Power RF LDMOS FETs Description The MR2002C is a 20-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies under 2000 MHz.
It can be used MR2002C in Class AB/B and Class C for all typical modulation formats.
It can also operate at lower voltage down to 12V with decreased power capability.
 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA, CW.
Frequency Gp (dB) P-1dB (W) 1000 MHz 22 20 D@P-1 (%) 65 Notice: It is recommended to operate this device only below 24V like 14V,12V etc, if operation ban...


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