MJ1509 LDMOS TRANSISTOR
90W, 28V High Power RF LDMOS FETs
Description
The MJ1509 is a 90-watt, highly rugged, unmatched ...
MJ1509 LDMOS
TRANSISTOR
90W, 28V High Power RF LDMOS FETs
Description
The MJ1509 is a 90-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies HF to 1.5 GHz. It can be used in Class AB/B and Class C for all typical modulation formats.
Document Number: MJ1509 Preliminary Datasheet V1.0
MJ1509
Typical Performance (on Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 500 mA, CW.
Frequency Gp (dB)
P-1dB (W)
D@P-1 (%)
1000 MHz
18
90
60
Typical Performance (on Innogration broadband demo): VDD = 24 Volts, IDQ = 600 mA, CW. Frequency(MHz) Pin(dBm) P-1dB (W) Gp (dB) D@P-1 (%)
30
29.40
57.54
18.20
49.33
60
30.10
75.86
18.70
57.36
100
29.00
79.43
20.00
60.18
200
28.30
79.43
20.70
64.02
300
28.00
67.61
20.30
61.78
400
29.30
57.54
18.30
56.28
512
30.20
51.29
16.90
55.50
Features
High Efficiency and Linear Gain Operations Integrated ESD Protectio...
