MJ10023

DATA SHEET MJ10023 NPN SILICON POWER DARLINGTON TRANSISTOR JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJ10023 is a Silicon NPN Power Darlington Transistor, mounted in a hermetically sealed metal case, designed for high voltage, high speed, power applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCEO VCEV VEBO IC ICM IB IBM PD TJ,Tstg ΘJC ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) 400 600 8.0 40 80 20 40 250 -65 to +200 0.7 SYMBOL TEST CONDITIONS MIN MAX ICEV ICEV ICER IEBO BVCEO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE VF Cob VCE=600V, VBE(OFF)=1.5V VCE=600V, VBE(OFF)=1.5V, TC=150°C VCE=600V, RBE=50Ω, TC=100°C VEB=2.0V IC=100mA IC=20A, IB=1.0A IC=20A, IB=1.0A, TC=100°C IC=40A, IB=5...