BCF29

BCF 29, BFC 30 PNP www.DataSheet4U.com General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 250 mW SOT-23 (TO-236) 0.01 g 2.9 ±0.1 0.4 3 1.1 Plastic case Kunststoffgehäuse 1.3 ±0.1 Type Code 1 2 2.5 max Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (DC) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM - IBM Tj TS Grenzwerte (TA = 25/C) BCF 29, BCF 30 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 100 mA 150/C - 65…+ 150/C Kennwerte (Tj = 25/C) Min. Typ. – – – 80 mV 150 mV Max. 100 nA 10 :A 100 nA 300 mV – Characteristics (Tj = 25/C) Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 32 V IE = 0, - VCB = 32 V, Tj = 100/C Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA - IEB0 2 - ICB0 - ICB0 – – – – – Collector saturation volt. – Kollektor-Sä...