NPN Silicon Darlington Transistors
BC 875 … BC 879
High current gain q Low collector-emitter saturation voltage q Comp...
NPN Silicon Darlington
Transistors
BC 875 … BC 879
High current gain q Low collector-emitter saturation voltage q Complementary types: BC 876, BC 878 BC 880 (
PNP)
q 2 3 1
Type BC 875 BC 877 BC 879
Marking –
Ordering Code C62702-C853 C62702-C854 C62702-C855
Pin Configuration 1 2 3 E C B
Package1) TO-92
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 90 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - case3)
1) 2)
Symbol BC 875 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 45 60
Values BC 877 60 80 5 1 2 100 200 0.8 (1) 150
Unit BC 879 80 100 A mA W ˚C V
– 65 … + 150
Rth JA Rth JC
≤
156 75
K/W
≤
For detailed information see chapter Package Outlines. If
transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
3)
383
5.91
BC 875 … BC 879
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 50 mA BC 875 BC 877 BC 879 Collector-base breakdown voltage IC = 100 µA BC 875 BC 877 BC 879 Emitter-base breakdown voltage, IE = 100 µA Collector cutoff current VCE = 0.5 × VCEmax Collector cutoff current ...