N0118GA

N0118GA SCR 5 September 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier with ultra-sensitive gate in a SOT54 (TO-92) plastic package. 2. Features and benefits High voltage capability Planar passivated for voltage ruggedness and reliability Ultra sensitive gate 3. Applications Electronic ballasts Safety shut down and protection circuits Sensing circuits Smoke detectors Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Tlead ≤ 67 °C; Fig. 1 IT(RMS) RMS on-state current half sine wave; Tlead ≤ 67 °C; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C; Fig. 7 Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; RGK = 1 kΩ; (VDM = 67% of VDRM); exponential waveform; Fig. 13; Fig. 14 Min Typ Max Unit - - 600 V - - 0.51 A - - 0.8 A - - 8 A - - 9 A - - 125 °C 0.5 - 7 µA 75 - - V/µs WeEn Semiconductors N0118GA SCR 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 A anode 2 G gate 3 K cathode Simplified outline 321 TO-92 (SOT54...