SCR
N0118GA
SCR
5 September 2018
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier ...
Description
N0118GA
SCR
5 September 2018
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier with ultra-sensitive gate in a SOT54 (TO-92) plastic package.
2. Features and benefits
High voltage capability Planar passivated for voltage ruggedness and reliability Ultra sensitive gate
3. Applications
Electronic ballasts Safety shut down and protection circuits Sensing circuits Smoke detectors Switched Mode Power Supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse voltage
IT(AV)
average on-state current
half sine wave; Tlead ≤ 67 °C; Fig. 1
IT(RMS)
RMS on-state current half sine wave; Tlead ≤ 67 °C; Fig. 2; Fig. 3
ITSM
non-repetitive peak on- half sine wave; Tj(init) = 25 °C;
state current
tp = 10 ms; Fig. 4; Fig. 5
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms
Tj
junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 7
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
VDM = 402 V; Tj = 125 °C; RGK = 1 kΩ; (VDM = 67% of VDRM); exponential waveform; Fig. 13; Fig. 14
Min Typ Max Unit
-
-
600 V
-
-
0.51 A
-
-
0.8 A
-
-
8
A
-
-
9
A
-
-
125 °C
0.5 -
7
µA
75
-
-
V/µs
WeEn Semiconductors
N0118GA
SCR
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
A
anode
2
G
gate
3
K
cathode
Simplified outline
321
TO-92 (SOT54...
Similar Datasheet