BT169B

BT169B SCR 5 September 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier with sensitive gate in a SOT54 (TO-92) plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic ICs and other low power gate trigger circuits. 2. Features and benefits Planar passivated for voltage ruggedness and reliability Sensitive gate Direct triggering from low power gate circuits and logic ICs 3. Applications Ignition circuits Lighting ballasts Protection circuits Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Tlead ≤ 83 °C; Fig. 1 IT(RMS) RMS on-state current half sine wave; Tlead ≤ 83 °C; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C; Fig. 7 Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 134 V; Tj = 125 °C; RGK = 1 kΩ; (VDM = 67% of VDRM); exponential waveform; Fig. 12 Min Typ Max Unit - - 200 V - - 0.5 A - - 0.8 A - - 8A - - 9A - - 125 °C - 50 200 µA 500 800 - V/µs WeEn Semiconductors BT169B SCR Symbol Parameter Conditions VDM = 134 V; Tj = 125 °C; (VDM = 67% of VDRM); exponent...