BT151X-800C

BT151X-800C SCR Rev.02 - 29 January 2023 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a TO220F "full pack" plastic package intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. 2. Features and benefits High bidirectional blocking voltage capability High thermal cycling performance Isolated mounting base package Planar passivated for voltage ruggedness and reliability 3. Applications Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM IT(AV) IT(RMS) ITSM Tj repetitive peak reverse voltage average on-state current RMS on-state current non-repetitive peak onstate current junction temperature half sine wave; Th ≤ 69 °C half sine wave; Th ≤ 69 °C; Fig. 1; Fig. 2; Fig. 3 half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Static characteristics IGT gate trigger current Dynamic characteristics VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform; Fig. 12 VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit; Fig. 12 Min Typ Max Unit - - 800 V - - 7.5 A - - 12 A - - 100 A - - ...