Document
DISCRETE SEMICONDUCTORS
DATA SHEET
BC859; BC860 PNP general purpose transistors
Product data sheet Supersedes data of 1999 May 28
2004 Jan 16
NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC859; BC860
FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V).
APPLICATIONS • Low noise input stages of audio frequency equipment.
PINNING
PIN 1 2 3
base emitter collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850.
handbook, halfpage
3
3
MARKING
TYPE NUMBER
BC859B BC859C
MARKING CODE(1)
4B* 4C*
TYPE NUMBER
BC860B BC860C
Note
1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China.
MARKING CODE(1)
4F* 4G*
1
Top view
1
2
MAM256
2
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
BC859B BC859C BC860B BC860C
NAME −
PACKAGE DESCRIPTION plastic surface mounted package; 3 leads
VERSION SOT23
2004 Jan 16
2
NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC859; BC860
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VCBO
VCEO
VEBO IC ICM IBM Ptot Tstg Tj Tamb
PARAMETER
collector-base voltage BC859 BC860
collector-emitter voltage BC859 BC860
emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature
CONDITIONS open emitter open base open collector
Tamb ≤ 25 °C; note 1
Note 1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
− −30 V − −50 V
− −30 V
− −45 V
− −5 V
−
−100
mA
−
−200
mA
−
−200
mA
− 250 mW
−65
+150
°C
− 150 °C
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS note 1
VALUE 500
UNIT K/W
2004 Jan 16
3
NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC859; BC860
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO collector cut-off current
IEBO hFE
VCEsat VBEsat
emitter cut-off current DC current gain
BC859B; BC860B BC859C; BC860C collector-emitter saturation voltage
base-emitter saturation voltage
VBE base-emitter voltage
Cc collector capacitance Ce emitter capacitance fT transition frequency F noise figure
BC859B; BC860B; BC859C; BC860C
noise figure
BC859B; BC860B; BC859C; BC860C
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0; VCB = −30 V IE = 0; VCB = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −2 mA; VCE = −5 V; see Figs 2 and 3
− −1 −15 nA − − −4 μA − − −100 nA
220 −
475
420 −
800
IC = −10 mA; IB = −0.5 mA
−
IC = −100 mA; IB = −5 mA
−
IC = −10 mA; IB = −0.5 mA; note 1
−
IC = −100 mA; IB = −5 mA; note 1
−
IC = −2 mA; VCE = −5 V; note 2
−600
IC = −10 mA; VCE = −5 V; note 2
−
IE = Ie = 0; VCB = −10 V; f = 1 MHz −
IC = Ic = 0; VEB = −500 mV; f = 1 MHz −
IC = −.