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BC859 Dataheets PDF



Part Number BC859
Manufacturers NXP
Logo NXP
Description PNP general purpose transistors
Datasheet BC859 DatasheetBC859 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BC859; BC860 PNP general purpose transistors Product data sheet Supersedes data of 1999 May 28 2004 Jan 16 NXP Semiconductors PNP general purpose transistors Product data sheet BC859; BC860 FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise input stages of audio frequency equipment. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC849 an.

  BC859   BC859



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DISCRETE SEMICONDUCTORS DATA SHEET BC859; BC860 PNP general purpose transistors Product data sheet Supersedes data of 1999 May 28 2004 Jan 16 NXP Semiconductors PNP general purpose transistors Product data sheet BC859; BC860 FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise input stages of audio frequency equipment. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850. handbook, halfpage 3 3 MARKING TYPE NUMBER BC859B BC859C MARKING CODE(1) 4B* 4C* TYPE NUMBER BC860B BC860C Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. MARKING CODE(1) 4F* 4G* 1 Top view 1 2 MAM256 2 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BC859B BC859C BC860B BC860C NAME − PACKAGE DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 2004 Jan 16 2 NXP Semiconductors PNP general purpose transistors Product data sheet BC859; BC860 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage BC859 BC860 collector-emitter voltage BC859 BC860 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. MIN. MAX. UNIT − −30 V − −50 V − −30 V − −45 V − −5 V − −100 mA − −200 mA − −200 mA − 250 mW −65 +150 °C − 150 °C −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-a) thermal resistance from junction to ambient Note 1. Transistor mounted on an FR4 printed-circuit board. CONDITIONS note 1 VALUE 500 UNIT K/W 2004 Jan 16 3 NXP Semiconductors PNP general purpose transistors Product data sheet BC859; BC860 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current IEBO hFE VCEsat VBEsat emitter cut-off current DC current gain BC859B; BC860B BC859C; BC860C collector-emitter saturation voltage base-emitter saturation voltage VBE base-emitter voltage Cc collector capacitance Ce emitter capacitance fT transition frequency F noise figure BC859B; BC860B; BC859C; BC860C noise figure BC859B; BC860B; BC859C; BC860C CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = −30 V IE = 0; VCB = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −2 mA; VCE = −5 V; see Figs 2 and 3 − −1 −15 nA − − −4 μA − − −100 nA 220 − 475 420 − 800 IC = −10 mA; IB = −0.5 mA − IC = −100 mA; IB = −5 mA − IC = −10 mA; IB = −0.5 mA; note 1 − IC = −100 mA; IB = −5 mA; note 1 − IC = −2 mA; VCE = −5 V; note 2 −600 IC = −10 mA; VCE = −5 V; note 2 − IE = Ie = 0; VCB = −10 V; f = 1 MHz − IC = Ic = 0; VEB = −500 mV; f = 1 MHz − IC = −.


BC858W BC859 BC859


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