Silicon Step Recovery Diodes
Silicon Step Recovery Diodes
Features
• Output Combs to 40+ GHz • Transition Times down to 35 ps • Screening per MIL-PR...
Description
Silicon Step Recovery Diodes
Features
Output Combs to 40+ GHz Transition Times down to 35 ps Screening per MIL-PRF-19500 and MIL-PRF-
38534 available
Description
The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picoseconds pulse forming.
MMDx & SMMDx Series
Rev. V4
Plastic SMT w/leads
Chip & Beam Lead Electrical Specifications: TA = 25°C
Model Chip
Voltage Breakdown
(VB)
V
Min.
Junction Capacitance
(CJ)
pF
Min.
Max.
Lifetime (t)
ns
Min.
Typ.
Transition Time (tt)
ps
Typ.
Max.
Frequency Cutoff (FCO)
GHz
Typ.
Theta (θJC)
°C/W Max.
MMD805-C12
60
2.5
3.5
80
100
250
300
130
15
MMD810-C12
50
1.5
2.5
40
70
200
250
200
22
MMD820-C12
40
1.0
1.7
30
60
80
100
390
25
MMD830-C11
25
0.5
1.0
15
30
60
80
700
45
MMD832-C11
20
0.4
0.8
10
15
60
80
660
50
MMD835-C11
15
0.3
0.7
10
20
60
70
800
60
MMD837-C11
20
0.2
0.4
5
10
60
70
1300
60
MMD840-C11
15
0.2
0.4
7
15
60
70
880
60
Beam Lead
MMDB30-B11
14
0.15
0.25
1
4
30
38
530
600
MMDB35-B11
16
0.13
0.20
1
4
35
45
482
600
MMDB45-B11
25
0.11
0.20
3
8
45
58
410
600
Test Conditions: VB: IR = 10 µA CJ: VR = 6 V, 1 MHz t: IF = 10 mA, IR = 6 mA @ 50% Recovery tt: for Chip: IF = 10 mA, VR = 10 V tt: for Beam Lead: IF = 3 mA, VR = 7 V FCO: 1/2πRS
1
MACOM Technology So...
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