MMD820-C12

Silicon Step Recovery Diodes Description The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming. Features Output combs to 40+ GHz Transition times down to 35 ps Screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings (Chip and Beam Lead) Parameters Reverse Voltage Forward Current Power Dissipation Junction Temperature Storage Temperature Mounting / Bonding Temperature Chip and Beam Lead Model MMDB30-B11 MMDB35-B11 MMDB45-B11 MMD805-C12 MMD810-C12 MMD820-C12 MMD830-C11 MMD832-C11 MMD835-C11 MMD837-C11 MMD840-C11 VBR CJ MIN MIN V pF 14 0.15 16 0.13 25 0.11 60 2.5 50 1.5 40 1.0 25 0.5 20 0.4 15 0.3 20 0.2 15 0.2 CJ MAX pF 0.25 0.20 0.20 3.5 2.5 1.7 1.0 0.8 0.7 0.4 0.4 Test Conditions IR = 10 A VR = 6 V F = 1 MHz Rating Rated VBR 50 mA (Beam Lead) 15...