MGR70x Series
Silicon Schottky Diodes
Features
Fast Switching High Breakdown Voltage
Description
The MGR-700 Series ...
MGR70x Series
Silicon
Schottky Diodes
Features
Fast Switching High Breakdown Voltage
Description
The MGR-700 Series are general purpose
Schottky barrier diodes specially designed to achieve a high voltage breakdown. This series of diodes can be used in the UHF and VHF frequency bands for pulse shaping, sampling and as fast logic gates.
Electrical Specifications: TA = 25°C
Voltage Breakdown (VB)
Forward Voltage (VF)
Model
IR 10 µA V
Min.
1 mA V
Typ.
MGR700
8
0.34
MGR701
8
0.34
MGR702
20
0.55
MGR703
20
0.41
MGR704
70
0.41
MGR705
70
0.41
Rev. V1
Bare Die
Junction Capacitance (CJ)
@ 0 Vdc, 1 MHz pF
Max. 1.2 1.0 1.2 1.0 2.0 1.2
Leakage Current (IR)
80% VB nA Max. 100 100 100 100 200 200
Absolute Maximum Ratings
Parameters Reverse Voltage Operating Temperature Storage Temperature
Rating See Voltage Ratings
-55°C to +150°C -65°C to +200°C
1
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