DatasheetsPDF.com

MSS60-253-H30 Dataheets PDF



Part Number MSS60-253-H30
Manufacturers MA-COM
Logo MA-COM
Description Extra High Barrier Silicon Schottky Diodes
Datasheet MSS60-253-H30 DatasheetMSS60-253-H30 Datasheet (PDF)

MSS60-xxx-x Series Extra High Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode. Rev. V1 Beam Lead Electrical Sp.

  MSS60-253-H30   MSS60-253-H30


Document
MSS60-xxx-x Series Extra High Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode. Rev. V1 Beam Lead Electrical Specifications: TA = 25°C Model Configuration VF Typ. V MSS60-144-B10B Single Junction 625 MSS60-148-B10B Single Junction 625 MSS60-153-B10B Single Junction 625 MSS60-244-B20 Series Tee 625 MSS60-248-B20 Series Tee 625 MSS60-253-B20 Series Tee 625 MSS60-444-B41 Ring Quad 650 MSS60-448-B41 Ring Quad 650 MSS60-453-B41 Ring Quad 650 MSS60-841-B80 Ring Quad 1200 MSS60-846-B80 Ring Quad 1200 MSS60-848-B80 Ring Quad 1200 Test Conditions IF = 1 mA VBR Min..


MSS60-253-E35 MSS60-253-H30 MSS60-444-E45


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)