MSS50-048-C15

MSS50-xxx-x Series High Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS50-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode. Rev. V1 Chip Electrical Specifications: TA = 25°C Model Configuration VF Typ. V MSS50-048-C15 Single Junction 0.5 VBR Min. V 4 CJ Typ. / Max. pF 0.12 / 0.15 MSS50-062-C16 Test Conditions Single Junction 0.5 IF = 1 mA 5 0.50 / 0.55 IR = 10 µA VR = 0 V F = 1 MHz RS Typ. Ω 7 RD Max. Ω 15 2 12 I = 5 mA FCO Typ. GHz 190 160 Outline C15 C16 Beam Lead Electrical Specifications: TA = 25°C Model Configuration VF Typ. V MSS50-146-B10B Single Junction 0.52 VBR Min. V 5 CJ Typ. / Max. pF 0.07 / 0.12 MSS50-...