MSS39-148-H20

MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Devices Description The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetector applications up to 40 GHz. Rev. V1 Chip Electrical Specifications: TA = 25°C Model VBR Min. V VF Typ. V MSS39-045-C15 5 0.40 CJ Max. pF 0.10 TSS Ttp. dBm -58 ϓ Typ. mV / mW 5,000 Frequency Max. GHz 18 MSS39-048-C15 5 0.39 0.15 -58 5,000 12 Test Conditions IR = 10 µA IF = 1 mA VR = 0 V, DC Bias = 10 mA, F = 10 GHz F = 1 MHz RL = 100 KΩ Video BW = 2 MHz Outline C15 C15 Beam Lead Electrical Specifications: TA = 25°C Model VBR Min. V VF Typ. V MSS39-144-B10B 3.5 0.38 CJ Max. pF 0.08 TSS Ttp. dBm -58 ϓ Typ. mV / mW 5,000 Frequency Max. GHz 40 MSS39-146-B10B 3.5 0.38 0.10 -58 5,000 26 MSS39-148-B10B 3.5 0.39 0.12 -58 5,000...