BC857 BC858
SMALL SIGNAL PNP TRANSISTORS
Type BC857A BC857B BC858A BC858B
Marking 3E 3F 3J 3K
s SILICON EPITAXIAL PL...
BC857 BC858
SMALL SIGNAL
PNP TRANSISTORS
Type BC857A BC857B BC858A BC858B
Marking 3E 3F 3J 3K
s SILICON EPITAXIAL PLANAR
PNP TRANSISTORS
s MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS
s VERY LOW NOISE AF AMPLIFIER s
NPN COMPLEMENTS FOR BC857 IS BC847
2
3 1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l
Parameter
VCES V CBO V CEO V EBO
IC ICM IBM IEM Ptot Tstg Tj
Collector-Emit ter Voltage (VBE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Peak Current Emitter Peak Current Total Dissipation at Tc = 25 oC Storage Temperature Max. O perating Junction Temperature
October 1997
Value
BC857
BC858
-50 -30
-50 -30
-45 -30
-5
-0.1
-0.2
-0.2
-0.2
300
-65 to 150
150
Uni t
V V V V A A A A mW oC oC
1/5
BC857/BC858
THERMAL DATA
Rthj-amb Thermal Resistance Junction-Ambient Rth j-SR Thermal Resistance Junction-Substrat e
Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm
Max Max
420 330
oC/W oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off Current (IE = 0)
VCE = -30 V VCE = -30 V Ta mb = 150 oC
V(BR)CES ∗ Collect or-Emitter Breakdown Voltage (VBE = 0)
IC = -10 µA for BC857 for BC858
V( BR)CBO ∗ Collect or-Base Breakdown Voltage
(IE = 0)
IC = -10 µA for BC857
for BC858
V( BR)CEO ∗ Collect or-Emitter Breakdow...