Document
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 793
llCIBLJD
Solid State Division
Power Transistors
RCA31/SDH RCA31B/SDH RCA31A/SDH RCA31C/SDH
JEOEC TO-220 AB
Hometaxial-Base, Silicon N-P-N VERSAWATT Transistors
For Medium-Power Switching and Amplifier Applications
H-1635
Features:
.50 W at 25°C case temperature • Low saturation voltage • Maximum safe-area-of-operation curves • Thermal-cycle ratings curves
TERMINAL CONNECTIONS
Terminal No.1 - Base Terminal No.2 - Collector Terminal No.3 - Emitter Mounting Flange Terminal No.4 - Collector
RCA31/S0H, RCA31A/SOH, RCA31B/SOH, and RCA31CI SOH are single-diffused hometaxial-base, silicon n-p-n transistors_ These types are essentially hometaxial-base versions of the RCA31, RCA31A, RCA31B, and RCA31C epitaxial-base types,. respectively.- They are intended for a wide variety of switching and amplifier applications, such as series and shunt
regulators and driver and output stages of high-fidelity amplifiers.