_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _-File No. 585
oocraLJD
Solid State Division
Power Transis...
_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _-File No. 585
oocraLJD
Solid State Division
Power
Transistors
RCA31 RCA318 RCA31A RCA31C
Epitaxial-Base, Silicon N-P-N VERSAWATT
Transistors
For Power-Amplifier and High-Speed-Switching Applications
Features:
JEDEC TO-220 AB
40 W at 2SDC case temperature S A rated collector current Min.fTof3MHzatl0V,SOOmA Designed for complementary use with RCA32,
RCA32A, RCA32B, and RCA32C p-n-p types*
RCA3l, RtA31A, RCA31B, and RCA31C are epitaxial-base, silicon p-n-p
transistors. They are intended for a wide variety of switching and amplifier applications. such as series and shunt
regulators and driver and output stages of high-fidelity amplifiers.
These new plastic power
transistors are designed for complementary use with devices in the RCA32 series. They differ from each other in voltage ratings.
* Technical data for the ACA32-series devices are given in RCA data
bulletin File 586.
MAXIMUM RATINGS,Absolute-Maxim...