2SA1120

: 2SA1120 , SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS. AUDIO POWER AMPLIFIER APPLICATIONS. FEATURES MIN h F E of 70 at-2V, -4A. -5A Rated Collector Current. MAX V CE ( sat ) of -1.0V at -4A I c . 10W at 25° C Case Temperature. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL VcBO VcEO RATING -35 -20 Emitter-Base Voltage VEBO Collector Current DC _IC_ Pulsed(Note 1) ICP -5 Emitter Current DC IE Pulsed(Note 1) *EP Collector Power Dissipation Ta=25°C Tc=25°C 1.0 10 Junction Temperature Storage Temperature Range u_ L stg 150 -55^150 Note 1. Pulse Test : Pulse Width=10ms (Max. ) Duty Cycle=30%(Max.) unit mmjlii UNIT V 1. EMITTER 2. COLLECTOR (HEAT SINK) TO - 126 3. BASE TOSHIBA 'Mounting Kit No. AC46C Weight : 0.72g ELECTRICAL CHARACTERISTICS CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current (Ta=25°C) SYMBOL x CB0 IEBO TEST CONDITION V C B=-35V, I E=0 VEB=-8V, IC...