SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : P =27W (Min.)
(f=1...
SILICON
NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : P =27W (Min.)
(f=175MHz, VC C=12.5V, Pi=4.2W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=14.5V, Pi=4W, f=175MHz
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage
'CBO
40
Collector-Emitter Voltage
VCEO
18
Emitter-Base Voltage
Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature
VEBO ic PC
Ti
4.0 6.0
50 175
1. EMITTER 2. BASE a EMITTER 4. COLLECTOR
Storage Temperature Range
-stg
-65-175
TOSHIBA
2— 10G1A
ELECTRICAL CHARACTERISTICS (Ta=25°C)
Mounting Kit No. AC57 Weight : 3.3g
CHARACTERISTIC
Collector Cut-off Current Collector-Base Breakdown Voltage
SYMBOL iCBO
TEST CONDITION V CB=15V, I E=0
v (BR) CBO I c=10mA, Ie=0
MIN. TYP. MAX. - - 1.0
40 -
-
Collector-Emitter Breakdown Voltage
v (BR) CEO I c =25mA, Ib=0
18 -
-
Emitter -Base Breakdown Voltage DC...
