2SC3308

:A SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . Low Collector Saturation Voltage : vCE(sat)=0.4V(Max.) at Ic=3A . High Speed Switching Time : t s tg=l . 0/is(Typ . ) . Complementary to 2SA1308. INDUSTRIAL APPLICATIONS Unit in mm 1H3MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VCEO VEBO ic ICP RATING 100 80 PC 30 Tstg 150 -55-150 UNIT 1. BASE 2. COLLECTOR (HEAT SINK' 3. EMITTER °C JEDEC ELECTRICAL CHARACTERISTICS (Ta =25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current Collector-Emitter Breakdown Voltage lEBO v (BR)CE0 TOSHIBA 2-1 OKI Weight : 2. 3g TEST CONDITION VCB=100V, I E=0 VEB=7V, I C =0 MIN. - TYP. - MAX. 1 1 IC=10mA, I B =0 80 - - UNIT mA MA V DC Current Gain hFE(l) (Note...