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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
Unit in mm
FEATURES . Low Collector Saturation Voltage
: VcE(sat)=0.4V(Max.) at Ic=3A , High Speed Switching Time : t st g=l . 0/is(Typ . )
10.3MAX.
—70 03.2±O.2
r 1/
/
i
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X < s
rfl -H
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. Complementary to 2SA1307
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
C...
