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2SC3298

Part Number	2SC3298
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Jul 17, 2018
Detailed Description	: 2SC3298 2SC3298A 2SC3298B ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPL...
Datasheet	2SC3298 PDF File

Overview

: 2SC3298 2SC3298A 2SC3298B ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS.
DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATURES .
High Transition Frequency : fT=100MHz (Typ .
.
Complementary to 2SA1306, 2SA1306A, 2SA1306B Unit in mm 1Q3MAX.
7.
0 0Z.
2± 0.
2 / /r\r '-ra J s d :.
: X < oL +i s to MAXIMUM RATINGS CHARACTERISTIC Collector-Base Voltage 2SC3298 2SC3298A 2SC3298B Collector-Emitter Voltage 2SC3298 2SC3298A 2SC3298B Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO v EBO ic IB Tstg RATING 160 180 200 160 180 200 UNIT 1.
5 0.
15 20 15...

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