BC857BV

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC857BV PNP general purpose double transistor Product specification Supersedes data of 2001 Sep 10 2001 Nov 07 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES 300 mW total power dissipation Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package Excellent coplanarity due to straight leads Improved thermal behaviour due to flat leads Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors Reduces required board space Reduces pick and place costs. APPLICATIONS General purpose switching and amplification. DESCRIPTION PNP double transistor in a SOT666 plastic package. NPN complement: BC847BV. MARKING TYPE NUMBER BC857BV MARKING CODE 3F 6 5 4 BC857BV PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 6 5 4 TR2 TR1 1 Top view 2 3 MAM450 1 2 3 Fig.1 Simplified outline (SOT666) and symbol. 2001 Nov 07 2 Philips Semiconductors Product specification PNP general purpose double transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per transistor VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. PARAMETER thermal resistance ...