:
SILICON NPN TRIPLE DIFFUSED MESA TYPE
33
HIGH VOLTAGE NPN SILICON POWER TRANSISTOR INTENDED FOR USE IN THE SWITCHED ...
:
SILICON
NPN TRIPLE DIFFUSED MESA TYPE
33
HIGH VOLTAGE
NPN SILICON POWER
TRANSISTOR INTENDED FOR USE IN THE SWITCHED MODE POWER SUPPLY OF TELEVISION RECEIVERS.
FEATURES . High Breakdown Voltage : VcES = 750V . Low Saturation Voltage
: V CE ( sat )=5V(Max.) at Ic=4A, Ifi=lA High speed : tf=0.15ys (Typ.)
Unit in mm
s025OMAX.
Zfel.0 MAX.
, +ao9 01.0—a 03
TJT-l-
30.2±Q2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Emitter Voltage
Collector Current
DC Peak
VCES VCEX (-V BE =1.5V VCEO IC
ICM
-ICM
RATING 750 750 300
UNIT
1. BASE 2. EMITTER
COLLECTOR ^CASE)
TO —
TOSHIBA
TC— 3 , TB— 2— 21B1A
Mounting Kit No. AC42C
Weight : 17.0g
DC IB
Base Current
Peak
IBM
_I B(AV)
100
(DC or averaged over
any 20mS period)
mA
-IBM
1.5
Total Collector Power Dissipation (Tc=25°C)
Junction Temperature
(turn-off current) tot 50 150
Storage Temperature Range Thermal Resistance
L stg Rth(j-c)
-65-150
2.5
C/W
1035-
TOSHIBA CORPORATION
BU126
ELEC...
