SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
BD135 BD137
BD1 39I
MEDIUM POWER AMPLIFIER APPLICATIONS.
FEATURES . Designed ...
SILICON
NPN EPITAXIAL TYPE (PCT PROCESS)
BD135 BD137
BD1 39I
MEDIUM POWER AMPLIFIER APPLICATIONS.
FEATURES . Designed for Complementary Use with BD136, BD138
and BD140.
7.9MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
BD135 BD137 BD139
Collector-Emitter Voltage
BD135 BD137 BD139
Emitter-Base Voltage
Collector Current
DC Peak
Collector Power Dissipation
Ta=25 C Tc^60 C
Junction Temperature
Storage Temperature Range
SYMBOL VCBO
v CEO Vebo I CM
RATING 45 60 80 45 60 80
0.5 1.5
PC L stg
6.5 150
-55-150
UNIT
1. EMITTER Z. COLLECTOR (HEAT S INK) Z. BASE
TO— 126
TOSHIBA
2-8P1A
Weight : 0.72g
ELECTRICAL CHARACTERISTICS (Ta=25 C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
V CB=30V, I E=0 Vcb=30V, lE=0, Ta=125°C
Emitter Cut-off Current
lEBO VEB=5V, I C =0
Collector-Emitter Breakdown Voltage
BD135 BD137 V(BR)CE0 IC=30mA, Ib=0
BD139
DC Current Gain
Collector-Emitter Saturation Voltage
hFE(l) VcE=...
