BC857BDW1T1

BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Device Marking: BC856BDW1T1 = 3B BC857BDW1T1 = 3F BC857CDW1T1 = 3G BC858BDW1T1 = 3K BC858CDW1T1 = 3L MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC BC856 −65 −80 −5.0 −100 BC857 −45 −50 −5.0 −100 BC858 −30 −30 −5.0 −100 Unit V V V mAdc 1 2 3 http://onsemi.com (3) (2) (1) Q1 Q2 (4) (5) (6) DEVICE MARKING 6 5 4 3xm See Table SOT−363/SC−88 CASE 419B Style 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR−5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 3.0 RqJA TJ, Tstg 328 −55 to +150 Unit mW 3x = Specific Device Code x = B, F, G, K, L M = Date Code ORDERING INFORMATION mW/°C °C/W °C Device BC856BDW1T1 BC857BDW1T1 BC857CDW1T1 BC858BDW1T1 BC858CDW1T1 Package SOT−363 SOT−363 SOT−363 SOT−363 SOT−363 Shipping† 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging S...