PNP small signal transistor
BC857B
Features 1) Ideal for switching and AF amplifier applications. 2) High current gain...
PNP small signal
transistor
BC857B
Features 1) Ideal for switching and AF amplifier applications. 2) High current gain.
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
BC857B
Taping T116 3000
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Symbol VCBO VCEO VEBO IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
Limits −50 −45 −5 −0.1 0.20 0.35 150 −65 to 150
Unit
V V V A
W
W∗
°C °C
Dimensions (Unit : mm)
BC857B
1.3 2.4
0.2Min.
2.9 0.4
(3)
0.95 0.45
(1)Emitter (2)Base (3)Collector
(2) (1) 0.95 0.95
1.9
0.15
Each lead has same dimensions Abbreviated symbol : G3F
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-emitter breakdown voltage BVCEO
Collector-base breakdown voltage BVCBO
Emitter-base breakdown voltage
BVEBO
Collector-base cutoff current
ICBO
VCE(sat1) Collector-emitter saturation voltage
VCE(sat2)
Base-emitter voltage DC current transfer ratio Transition frequency
VBE(on) hFE fT
Collector outpu capacitance
Cob
Collector-base cutoff current
ICBO
Min. −45 −50 −5
− − − −0.6 210 − − −
Typ. Max. Unit −−V −−V −−V − −0.015 μA − −0.3 V − −0.65 V − −0.75 V − 480 −
250 − MHz − 4.5 pF − −4 μA
Conditions IC= −1mA IC= −50μA IE= −50μA VCB= −30V IC/IB= −10mA/ −0.5mA IC/IB= −100mA/ −5mA VCE= −5V, IC= −10mA VCE= 5V, IC= −2mA VCE= −5V, IE=...