2N5265
thru (SILICON)
2N5270
P-Channel junction depletion mode (Type A) fieldeffect transistors designed for general-pu...
2N5265
thru (SILICON)
2N5270
P-Channel junction depletion mode (Type A) fieldeffect
transistors designed for general-purpose amplifier applications.
CASE 20(5)
(TO·72)
O2 o
STYLE 5 PIN 1. SOURCE
10 0 3
2. GATE 1
o 3. DRAIN
4 4. CASE
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage Reverse Gate-Source Voltage
Drain Current Gate Current -forward
Total Device Dissipation @ TA = 25°C Derate above 25°C
Storage Temperature Range
Operating Junction Temperature Range
Symbol
VDS VDG VGS(r) ID IG(f) PD
Tstg TJ
Value
60 60 60 20 10 300 2.0 -65 to +200
-65 to +175
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mW mWrC
°c °c
2·112
2N5265 thru 2N5270 (continued)
ELECTRICAL CHARACTERISTICS (T. = 2S"C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage (IG = 10 /LAde, Vos = 0)
IDGate-Source Cutoff Voltage (VOS = 15 Vde, = 1. 0 /LAde)
Gate Reverse Current (VGS = 30 Vde, Vos = 0) (VGS = 30 Vde, VDS = 0, TA = 150·C)
2N5265, 2N5266 2N5267, 2...
