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2N5230

ETC

PNP SILICON ANNULAR TRANSISTORS

2N5229 (SILICON) 2N5230 2N5231 PNP SI LICON ANNULAR TRANSISTORS · •. designed for low·level, chopper applications requir...


ETC

2N5230

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Description
2N5229 (SILICON) 2N5230 2N5231 PNP SI LICON ANNULAR TRANSISTORS · . designed for low·level, chopper applications requiring high speed operation. This series of devices offers excellent characteristics for use in servo·loop, sensing instrumentation and control amplifier for motor drive systems. These transistors can also be used as replace· ment devices for alloy·typetransistorswhere high BVEBO is required. Low Offset Voltage - VEC(off) = 0.5mVdc(Max)@IB= 100"Adc Low Dynamic "ON" Series Resistance - redON)= 6.0 Ohms (Max) @IB = 1.0 mAdc Space Saving TO·46 Package PNPSILICON CHOPPER TRANSISTORS MAXIMUM RATINGS Rating ·Collector-Emitter Voltage Symbol 2N5229 2N5230 VCEO 10 20 2N5231 30 Unit Vdc ·Collector-Base Voltage VCB 15 30 50 Vdc -Emitter-Sase Voltage ·Collector Current - Continuous VEB IC 15 30 50 _50_ Vdc mAde Total Device Dissipation@TA = 2SoC Derate above 2SoC Po . . - - 0.5------'" ----2.86- Watt mW/oC -Total Device Dissipation@Tc...




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