2N5220 (SILICON)
NPN SILICON ANNULAR TRANSISTOR
... designed for low-power, large signal audio and general-purpose ampl...
2N5220 (SILICON)
NPN SILICON ANNULAR
TRANSISTOR
... designed for low-power, large signal audio and general-purpose amplifier applications. Complements
PNP type 2N5221 .
Low Saturation Voltage - VCE(sat) = 0.5 Vdc (Max) @IC= 150 mAde, 16 = 15 mAdc
NPN SILICON AMPLIFIER
TRANSISTOR
'MAXIMUM RATINGS Rating
Collector-Emitter Voltage
Collector-Base Voltage Emitter-Base Voltage
Collector Current - Continuous Total Power Dissipation @ TA:: 25°C
Derate above 2SoC
Total Power Dissipation@TC:::: 2SoC Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO VCB VEB IC
Po
Po
TJ,Tstg
Value 15 15 3.0 500 350 2.8 1.0 8.0
-55 to +150
Unit Vdc Vdc Vdc
mAde
mW mW/oC
Watt mWf'C
°c
*THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case
Symbol ReJAlll
ReJC
Max 357 125
Unit
°CIW °CIW
*Indicates JEDEC Registered Data. (1) R6JA is measured with the device soldered into a typical printed circuit board.
O-jlf...
