2N5162

2N5161 (SILICON) 2N5162 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR CASE 36 (TO-60) Case common to emitter PNP silicon RF power transistors designed for amplifier or oscillator applications in military and industrial equipment. Suitable for use as Class B or C output or power oscillator in VHF applications MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation@ TC =25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC PD TJ , Tstg 2NS161 2NS162 40 60 4.0 1.5 5.0 20 0.114 50 0.286 -65 to +200 Unit Vdc Vdc Vdc Adc Watts W;OC °c FIGURE 1 - 175 MHz TEST CIRCUITS !-28 V 2400 pF 3.0pF-~pF~ 1. - 2N5161 L3 0.02PF! Ll L2 rv' ~ L4 ,." 1.5-15 pF RL = 50 n ~ 5.0-80.pF j ~ RFC (1<5.0 I 3.0- 30 pF Ll - 1TURN, #18 AWG (21 nH) L2, L3 - 0.33 pH RFC L4 - 4 TURNS, #16 AWG, W'I.O. (200 nH) 1b - 2N5162 - 1T I1 :1T-28 V 0.002 pF 0. 002 !IF 0.5 ~F 5.0-~,...