File No. 322
OO(]5LJD
Solid State Division
Power Transistors
2N5293 2N5294 2N5295 2N5296 2N5297 2N5298
22NN55229953 2N...
File No. 322
OO(]5LJD
Solid State Division
Power
Transistors
2N5293 2N5294 2N5295 2N5296 2N5297 2N5298
22NN55229953 2N5297
~
For TO-66 Sockets
JEOEC TO·220AA
22NN55229946 2N5298
~
JEOEC TO·220AB
lHIometaxial-Sase, Silicon N-P-N VERSAWATT
Transistors
General·Purpose Types for Medium-Power Switching and Amplifier Applications in Military, Industrial, and Commercial Equipment .
FEATURES o Low saturation voltage-
YeE(sat) = 1 Y max. at Ie = 0.5 A (21'15293, 21'15294) = 1 Y max. at Ie = 1 A (21'15295, 21'15296) = 1 Y max. at Ie =' 1.5 A (21'15297, 21'15298)
0YERSAWATT package (molded-silicone plastic)
o Maximum safe-area-of-operation curves specified for DC and pulse service
RCA-2N5293, 2N5294, 2N5295. 2N5296. 2N5297 and 2N5298* are hometaxial-base silicon n-p-n
transistors. They are intended for a wide variety of mediumpower switching and amplifier applications such as series and shunt regul ators. and in driver and output stages of high-fidelity amplifiers. Types 2N5293 , 2N5...