Document
File No. 12 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
OOCD5LJD
Solid State Division
Power Transistors 2N2015 2N2016
RCA 2N2015 and 2N2016 are diffused-junction power transistors of the silicon n-p-n type having very high powerdissipation capabilities (150watts). The 2N20l5 and 2N2016 are particularly useful in power-switching circuits such as those employed in dc-ta-de converters, inverters, choppers, and relay-control equipment. They are also extremely useful in oscillator, regulator, and pulse-amplifier circuits, and as class A and class B push-pull amplifiers for af and servo applications.
Maximum Ratings, Absolute-Maximum Values:
2H2015 2N2016
COLLECTOR-TO-BASE YOLTAGE.
COLLECTOR-TO- EMITTER VOLTAGE: Wi th base open (Sustaining voltage)
EMITTER-TO-BASE YOLTAGE.
COLLECTOR CURRENT.
EMITTER CURRENT.
BASE CURRENT . TRANSISTOR DISSIPATION:'
At case t.emperatures up to 25° C. . • •
At other case temperatures
TEMPERATURE RANGE: Operating and Storage.
LEAD.